Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation
Identifieur interne : 013D62 ( Main/Repository ); précédent : 013D61; suivant : 013D63Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation
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Abstract
Transparent, conductive indium tin oxide (ITO) films were fabricated by pulsed-laser deposition on substrates held at room temperature. We investigated the relationship between electrical/optical properties of the films and the material stoichiometry, measured by Rutherford backscattering. The lowest resistivity films (∼4×10-4Ωcm) have excessive oxygen compared with the stoichiometric composition ITO. After annealing in argon at 400°C for 1.5 h, the oxygen-to-(indium+tin) ratio approaches the stoichiometric composition of 1.5 and resistivities of annealed samples are ∼2.5×10-4Ωcm. The room-temperature ITO resistivity dependence on chamber gas pressure is explained in terms of a gas-dynamic model and oxygen content of the film. © 1999 American Institute of Physics.
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Wu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy and Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Department of Electrical and Computer Engineering, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Maree, C H M" uniqKey="Maree C">C. H. M. Maree</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Haglund, R F" uniqKey="Haglund R">R. F. Haglund</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Hamilton, J D" uniqKey="Hamilton J">J. D. Hamilton</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Morales Paliza, M A" uniqKey="Morales Paliza M">M. A. Morales Paliza</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Huang, M B" uniqKey="Huang M">M. B. Huang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Feldman, L C" uniqKey="Feldman L">L. C. Feldman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Weller, R A" uniqKey="Weller R">R. A. Weller</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0302891</idno><date when="1999-07-15">1999-07-15</date><idno type="stanalyst">PASCAL 99-0302891 AIP</idno><idno type="RBID">Pascal:99-0302891</idno><idno type="wicri:Area/Main/Corpus">014E17</idno><idno type="wicri:Area/Main/Repository">013D62</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Electrical resistivity</term><term>Experimental study</term><term>Indium compounds</term><term>Light transmission</term><term>Pulsed laser deposition</term><term>RBS</term><term>Semiconductor materials</term><term>Semiconductor thin films</term><term>Stoichiometry</term><term>Tin compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361L</term><term>6150N</term><term>8280Y</term><term>8115F</term><term>6855N</term><term>6172C</term><term>7866L</term><term>Etude expérimentale</term><term>RBS</term><term>Indium composé</term><term>Etain composé</term><term>Stoechiométrie</term><term>Dépôt laser pulsé</term><term>Matériau semiconducteur</term><term>Couche mince semiconductrice</term><term>Résistivité électrique</term><term>Recuit</term><term>Transmission lumière</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transparent, conductive indium tin oxide (ITO) films were fabricated by pulsed-laser deposition on substrates held at room temperature. We investigated the relationship between electrical/optical properties of the films and the material stoichiometry, measured by Rutherford backscattering. The lowest resistivity films (∼4×10<sup>-4</sup>Ωcm) have excessive oxygen compared with the stoichiometric composition ITO. After annealing in argon at 400°C for 1.5 h, the oxygen-to-(indium+tin) ratio approaches the stoichiometric composition of 1.5 and resistivities of annealed samples are ∼2.5×10<sup>-4</sup>Ωcm. The room-temperature ITO resistivity dependence on chamber gas pressure is explained in terms of a gas-dynamic model and oxygen content of the film. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>86</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation</s1></fA08><fA11 i1="01" i2="1"><s1>WU (Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAREE (C. H. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>HAGLUND (R. F.)</s1></fA11><fA11 i1="04" i2="1"><s1>HAMILTON (J. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>MORALES PALIZA (M. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>HUANG (M. B.)</s1></fA11><fA11 i1="07" i2="1"><s1>FELDMAN (L. C.)</s1></fA11><fA11 i1="08" i2="1"><s1>WELLER (R. A.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy and Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235</s1></fA14><fA20><s1>991-994</s1></fA20><fA21><s1>1999-07-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0302891</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Transparent, conductive indium tin oxide (ITO) films were fabricated by pulsed-laser deposition on substrates held at room temperature. We investigated the relationship between electrical/optical properties of the films and the material stoichiometry, measured by Rutherford backscattering. The lowest resistivity films (∼4×10<sup>-4</sup>Ωcm) have excessive oxygen compared with the stoichiometric composition ITO. After annealing in argon at 400°C for 1.5 h, the oxygen-to-(indium+tin) ratio approaches the stoichiometric composition of 1.5 and resistivities of annealed samples are ∼2.5×10<sup>-4</sup>Ωcm. 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